15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS
ISPS 2021
Prague, 26 August – 27 August 2021
PRELIMINARY PROGRAMME
Thursday, 26 August 2021 |
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| Registration of participants: CTU in Prague, Faculty of Electrical Engineering, Technicka 2, Prague 6 from 8:00 to 9:30 | |
| 9:45 –10:00 | Opening session |
| Session No. 1 “Robustness, Ruggedness and Efficiency (1)” | |
| 10:00 – 10:40 | H.-J. Shulze et al. (invited): “Important Criteria for the Short-Circuit Capability of IGBTs”, Infineon Technologies AG, Neubiberg, Germany |
| 10:40 – 11:00 | Madhu-Lakshman Mysore et al.: “Aluminium Modification as Indicator for Current Filaments under Repetitive Short-Circuit in 650V IGBTs”, TU Chemnitz and Infineon Technologies AG, Neubiberg, Germany |
| 11:00 – 11:20 | Madhu-Lakshman Mysore et al.: “Study of 6.5 kV Injection Enhanced Floating Emitter (IEFE) IGBT Switching Behavior and its Improved Short-Circuit Ruggedness”, TU Chemnitz and Infineon Technologies AG, Neubiberg, Germany |
| 11:20 – 11:40 | S. T. Kong, L. Ngwendson: “Experimental Comparison of a New SAG-IGBT and Conventional DAG-IGBT Structures with LTO Design in terms of Turn-on Performance”, R&D Department, Dynex Semiconductor Ltd, Lincoln, U.K. |
| 11:40 – 13:20 | Lunch Time |
| Session No. 2 “Robustness, Ruggedness and Efficiency (2)” | |
| 13:20 – 13:40 | Weinan Chen et al.: “High-voltage IGBT turn-off at transition from overcurrent to desaturation”, TU Chemnitz, Germany |
| 13:40 – 14:00 | L. Balestra et al.: “Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach”, ARCES and DEI, University of Bologna, and Hitachi-ABB Power Grids, Lenzburg, Switzerland, and CTU Prague, Czech Republic. |
| 14:00 – 14:20 | R. Siemieniec et al.: “Power Device Solutions for Highly Efficient Power Supplies”, Infineon Technologies Austria AG, Villach, Austria. |
| 14:20 – 14:40 | Gurunath Vishwamitra Yoganath et al.: “A Simulation study of 6.5kV Gate Controlled Diode”, University of Rostock, Germany |
| 14:40 – 15:10 | Coffee break |
| Session No. 3 “Degradation and Defects in Wide-Gap Power Devices” | |
| 15:10 – 15:30 | J. Marek et al.: “Degradation of Power SiC Trench-MOSFET Under Repetitive UIS Stress”, Slovak University of Technology, Bratislava, Slovakia, and NanoDesign, s.r.o, Bratislava, Slovakia. |
| 15:30 – 15:50 | J. Kozárik et al.: “Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions”, Slovak University of Technology, Bratislava, Slovakia, and NanoDesign, s.r.o, Bratislava, Slovakia. |
| 15:50 – 16:10 | A. Lachichi and P. Mawby : “TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices”, University of Warwick, U.K. |
| 16:10 – 16:30 | J. Drobný et al.: “The influence of electrical stress on the distribution of electrically active defects in IGBT”, Slovak University of Technology, Bratislava, Slovakia. |
| 19:00 – 21:30 | Social dinner (location t.b.d.) |
Friday, 27 August 2021 |
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| Session No. 4 “Packaging and Integration” | |
| 9:00 – 9:40 | Shiori Idaka (invited): “New Packaging Concepts: Bridging Devices and Applications”, Mitsubishi Electric Corporation, Tokyo, Japan. |
| 9:40 – 10:00 | S. Clausner, M. Hanf and N. Kaminski: “Parylene as Coating for Power Semiconductor Devices”, University of Bremen, Germany |
| 10:00 – 10:20 | R. Lerner and N. H. Hansen: “Commercial Sweet Spots for GaN and CMOS Integration by Micro-Transfer Printing”, X-FAB Global Service GmbH, Erfurt, Germany. |
| 10:20 – 10:40 | Coffee break |
| Session No. 5 “Integration of Power Devices” | |
| 10:40 – 11:00 | M. Rahimo, I. Nistor, and D. Green: “Singular Point Source MOS (S-MOS) Cell Concept”, mqSemi AG, Zug, Switzerland, and Silvaco Europe Ltd., Cambridgeshire, U.K. |
| 11:00 – 11:20 | Hongyang Yan and E. M. Sankara Narayanan: “Scalable Vertical GaN FETs (S-GaN FETs) for Low Voltage Applications”, University of Sheffield, U.K. |
| 11:20 – 11:40 | C. Herrmann, Xing Liu, and Josef Lutz:” Fast Short Circuit Type I Detection Method based on VGE-Monitoring”, Chemnitz University of Technology, Germany. |
| 11:40 – 13:20 | Lunch time |
| Session No. 6 “Measurement and Testing Techniques” | |
| 13:20 – 13:40 | L. Maresca et al.: “Development of an HB-ESD Tester for Power Semiconductor Devices”, University of Naples – Federico II, Napoli, Italy. |
| 13:40 – 14:00 | D. Helmut et al.: “Measuring Transient I/V Turn-On Behavior of a Power MOSFET without a Current Sensor”, Technical University of Munich, Germany. |
| 14:00 – 14:20 | J. Hájek, V. Papež, and M. Horák: “New Method for Si-Wafer Resistivity Determination”, CTU Prague, Czech Republic. |
| 14:20 – 14:40 | Kamil Kuźniak, Marcin Janicki: “Structure-Aware Compact Thermal Models of Power LEDs”, Łódź University of Technology, Poland. |
| 14:40 – 15:00 | Closing of ISPS |