16th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS
ISPS 2023
Prague, 30 August – 1 September 2023
PROGRAMME
Wednesday, 30 August 2023
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Registration of participants:
- Venue: CTU in Prague, Czech Institute of Informatics, Robotics and Cybernetics, Jugoslávských partyzánů 1580/3, Prague 6
- room: Penthouse on 10th floor (gate A)
- time: from 11:00 to 13:30
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13:30 |
ISPS Opening
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13:40 – 14:40 |
Session No. 1 – Thermoelectric Microgenerators and MOSFETs, Chairperson: H.-J. Schulze
- Wachutka: Energy Harvesting Using Thermoelectric Microgenerators: Realistic Perspective or Utopian Idea? A Critical Analysis (Invited)
- Siemieniez, Cesar Braz, Simone Mazzer and Gerhard Noebaueret : New Power MOSFET and their use in Intermediate Bus Converters
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14:40 – 15:10 |
Coffee Break
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15:10 – 16:10 |
Session No. 2 – Power Semiconductor Technology Platform and Press Pack IGBTs, Chairperson: Gerhard Wachutka
- Munaf T. A. Rahimo: Understanding power semiconductor technology platforms for building a viable and sustainable product roadmap (Invited)
- Koushik Sasmal, Michael Stelte, Claus Panzer, Jens Przybilla and Christof Drilling: Press Pack IGBT for MVDC-Breaker applications
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19:00 – 21:00 |
Welcome Party on the Boat
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Thursday, 31 August 2023
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09:00 – 10:00 |
Discussion session (8 poster presentations), Chairperson: Vítězslav Benda
- Jiri Hajek and Vaclav Papez: On the design of measuring circuit for OCVD method
- Michael Hanf, Raffael Schnell, Sven Matthias and Nando Kaminski: Sulphur related Corrosion in Power Modules and its Impact on the Switching Performance
- Yijun Ye, Alexander Hensler, Thomas Basler and Josef Lutz: Surge current test of SiC MOSFET with planar Assembling and Joining Technology
- Xing Liu and Thomas Basler: Channel Potential Modification induced Displacement Current during the Trench-Gate IGBT Switching
- Xiao Tan and Shankar Madathil: Compact GaN-based Bidirectional Polarization Super Junction HFETs with Schottky Gate on Sapphire
- Michal Tilšer, Zuzana Ptáková, Nino Degiampietro and Ladislav Radvan: High power thyristor with enhanced case non-rupture current capability
- Wentong Zhang, Shiyao Cai, Lingying Wu, Nailong He, Sen Zhang, Ming Qiao, Zhaoji Li and Bo Zhang: Novel Constant Surface Concentration Depletion Mechanism and Its Experiments in Homogenization field LDMOS
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10:00 – 11:20 |
Session No. 3 – SiC Devices, Chairperson: Munaf T.A. Rahimo
- W. Schustederer : SiC Power Device Processing with special regard to Ion Implantation (Invited)
- Marco Boccarossa, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace and Giovanni Salvatore: Threshold Voltage Temperature Dependence for a 1.2 kV SiC MOSFET with Non-Linear Gate Stack
- Alireza Sheikhan and Ekkanath Madathil Sankara Narayanan: Evaluation of 1.2kV Si-SiC Hybrid Power Switch for Electrical Motor Drive Applications
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11:20 – 11:40 |
Coffee break
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11:40 – 13:00 |
Session No. 4 – GaN and Diamond Devices, Chairperson: Shankar Ekkanath Madathil
- M. Gupta: GaN HEMT Device Model Development for Implementation of Different Circuit Designs (Invited)
- Maximilian Goller, Jörg Franke, Max Fischer, Gilberto Curatola, Josef Lutz and Thomas Basler: Adapted temperature calibration for Schottky p-GaN power HEMTs
- Pavel Hazdra, Alexandr Laposa, Zbyněk Šobáň, Vojtěch Povolný, Jan Voves, Nicolas Lambert, Andrew Taylor and Vincent Mortet: Power Diode Structures Realized on (113) oriented Boron Doped Diamond
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13:00 – 14:00 |
Lunch time
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14:30 |
Excursion |
19:30 |
Social dinner (location t.b.d.) |
Friday, 1 September 2023
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8:30 – 10:00 |
Session No. 5 – Silicon Devices 1, Chairperson: Werner Schustederer
- Narender Lakshmanan, James Abuogo, Jörg Franke and Josef Lutz: Comparison of IGBT Junction Temperature Determination using an On-chip Sensor and the VCE(T) Method
- Lena Bergmann, Bianca Kurz, Gregor Pobegen, Daniel Schlögl, Holger Schulze, Heiko B. Weber and Michael Krieger: Annealing behavior of Pt and PtH defects in fully process 1.2kV Si diodes covering the whole substrate thickness
- Madhu Lakshman Mysore, Mohamed Alaluss, Felix Fraas, Thomas Basler, Josef Lutz, Roman Baburske, Franz-Josef Niedernostheide and Hans-Joachim Schulze: Surge-Current capability of IGBTs with different voltage classes
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10:00 – 10:20 |
Coffee break
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10:30 – 12:00 |
Session No. 6 – Silicon Devices 2, Chairperson: Mridula Gupta
- Shankar Ekkanath Madathil: Impact of Super Junction Concepts in Silicon and Wide Bandgap Semiconductors (Invited)
- Gurunath Vishwamitra Yoganath and Hans-Günter Eckel: Low forward voltage gate controllable diode for 6.5 kV HVDC application
- Libor Pína, Jiří Hájek, Jan Boháček and Jan Vobecký: High-Voltage Thyristors with Enhanced Dynamic Robustness
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12:00 |
ISPS Closing
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