17th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS

ISPS 2025

Prague, 27 – 29 August 2025

PROGRAMME

Venue: CTU in Prague, Czech Institute of Informatics, Robotics and Cybernetics, Jugoslávských partyzánů 1580/3, Prague 6 , room: Penthouse on 10th floor (gate A)

27.8.2025

08:00 – 09:30        Registration of participants:

9:30                      ISPS Opening

1st session: SiC devices         

9:40 – 10:20          Towards SiC 2.0 – on the way to reliable SiC devices
Shiori Idaka (Mitsubishi) Invited keynote paper

10:20 – 10:45        A review of short circuit failure of Silicon Carbide MOSFETs
Guang Zeng, (Greenel Semiconductor)

10:45 – 11:10        Coffee break

11:10 – 11:35        Analysis of Snap-Off Behavior During Reverse Recovery of SiC MOSFET Body Diode
Abhishek Maitra, Madhu Lakshman Mysore, Christian Bäumler, Josef Lutz, Thomas Basler (Chemnitz University of Technology)

11:35 – 12:00        Improved Switching Behavior of SiC-MOSFETs with Monolithic SiRC-Snubber Chips
Tilman Patzer, Josef Lutz and Thomas Basler (Chemnitz University of Technology)

12:00 – 12:25        Accumulation-mode SiC Trench MOSFET
Hamed Abnavi, Celine Steenge, Simone D. Dulfer, Erwin J.W.Berenschot, Niels R. Tas, Raymond J.E.Hueting (University of Twente, NL)

12:25 – 14:00        Lunch time

2nd session: Power Electronics roadmap and GaN Devices

14:00 – 14:40        Power semiconductors in the current electronics roadmap
Malcolm Penn (Future Horizons) Invited keynote paper

14:40 – 15:05        Short Circuit Measurements of GaN-Devices
Nick Wieczorek, Benedikt Kohlhepp, Sibylle Dieckerhoff (Technische Universität Berlin)

15:05 – 15:40        Coffee break

15:40 – 16:05        Investigation of Gate Driving Condition Effect on p-GaN HEMTs under Single Event Short Circuit Type I
Gengqi Li, Maximilian Goller, Thomas Basler, Josef Lutz (Chemnitz University of Technology)

16:05 – 16:30        Exploring the Influence of Temperature in Gate Length Scaling of GaN HEMT Device
Mridula Gupta, Anupama Anand, Rakhi Narang and Manoj Saxena (University of Delhi) Invited paper

19:00 – 21:00        Welcome party on a boat

28.8.2023

9:00 – 10:00          Poster session, Chairperson: Vítězslav Benda

Photo-Ionization of Dopants in Diamond Semiconductor Devices
Pamela Vazquez-Vergara, Xavier Perpinyà, Xavier Jordà, Miquel Vellvehi, José Rebollo, Josep Montserrat (Institute of Microelectronics of Barcelona (IMB-CNM, CSIC), Spain)

Influencing Parameters on Dynamic On-State Resistance RDS,on in GaN Power HEMTs including the Recovery Behavior and Test Procedure
Maximilian Goller, Gengqi Li, Jörg Franke, Josef Lutz, Thomas Basler (Chemnitz University of Technology)

The Influence of Load Current on the Zth(t) Curve of IGBT
Hao Liu, Jiecai Wu  Luhong Xie, Maoyang Pan, Hongyu Sun, Yuxing Yan, Yongzhang Huang (North China Electric Power University), Lixin Wu, Erping Deng (Hefei University of Technology)

Device Simulation of a Bidirectional Phase Control Thyristor
Vojtěch Brandštýl and Jan Vobecký

Impact of Auxiliary Particle Filter Diagnostic Models on Prognostic Models for IGBT Power Modules
Al-Mu’Tez Billah Al-Sqour, Ali Ibrahim, Zoubir Khatir, Sebastien Cornet and Denis Jaze

TCAD-Based Switching Performance Comparison of 3D Planar and Quasi-Planar Trench 3.3 kV SiC MOSFETs
Mansha Kansal, Iulian Nistor, Kyrylo Melnyk, Giuseppe Capasso, Alessandro Borghese, Michele Riccio, Arne Benjamin Renz, Giovanni Breglio, Neophytos Lophitis, Andrea Irace, Marina Antoniou, Munaf Rahimo and Luca Maresca

400 V SiC MOSFET Technology Empowering Innovative Three-Level Power Supplies for AI Servers
Ralf Siemieniec, Martin Wattenberg, Matthias J. Kasper, Jyotshna Bhandari, Heejae Shim, Sriram Jagannath and Gerald Deboy

Contact-less measurement method of minor carrier life-time in Si monocrystal
Václav Papež and Jiri Hajek

3rd session Si Devices

10:10 – 10:50        Si-based HV semiconductors: innovation perspectives for high power applications
Tobias Keller (Hitachi Energy) Invited keynote paper

10:50 – 11:15        Performance of 1.2 kV Field Stop Trench Clustered IGBTs in discrete and in Hybrid Power Switch Configurations
Alireza Sheikhan, Ekkanath Madathil Sankara Narayanan (The University of Sheffield)

11:15 _ 11:40        Challenges related to Si wafer for 300 mm Si-IGBT Processes
Shin-Ichi Nishizawa, Wataru Saito (Kyushu University)

11:40 – 12:00        Coffee break

12:00 – 12:25        Enhancing Soft Turn-Off in Fast Recovery Diodes via Quasi Local Lifetime Control
Lars Knoll, Nick Schneider, Paula Reigosa, Roger Stark, Tommaso Stecconi, Coris Li, Leon Liang (SwissSem) Invited paper

12:25 – 12:50        Dynamic Avalanche and Current Filaments in Voltage Commutated Phase Control Thyristors
Jan Vobecky, Libor Pina, Reto Leutwyler (Hitachi Energy)

12:50 – 14:15        Lunch time 

14:15                    Excursion

19:30                    Social diner (location TBD)

29.8.2025

4th session Beyond Wide Bandgap Chairperson: Sankara Narayanan Ekkanath Madathil

8:30 – 9:10            Galliumoxide-based high-voltage devices for power switching – Technology and path towards application
Oliver Hilt (Ferdinand-Braun-Institut FBH), Invited keynote paper

9:10 – 9:35            Thermal Performance Improvement in Ga2O3 Schottky Barrier Diodes Using Poly-SiC Substrate: A TCAD Simulation Study
Manoj K Yadav (CNRS, Lille, France), Ankush Bag (Indian Institute of Technology Guwahati, Assam, India), Pavel Hazdra (Czech Technical University in Prague, CZ)

9:35 – 10:00          Coffee break

5th session Packaging and Reliability

 10:00 – 10:25        Detection of Bond Wire Lift-Off by Switching Tests – Proof of Concept for Single and Parallel SiC-MOSFETs
Jonas Müller, Hauke Lutzen, Nando Kaminski (University of Bremen), Mustafa Burak Çoruk (Middle East Technical University), Wataru Saito (Kyushu University)

10:25 – 10:50        Impact of Humidity and Temperature on the Electrical Properties of Silicone Gel in Power Electronic Applications
Sven Clausner, Jan-Hendrik Peters, Nando Kaminski (University of Bremen), David Green (Silvaco Europe Ltd.), Stefania Carapezzi (Silvaco France)

10:50 – 11:15        Thermal Coupling Affected Power Cycling Lifetime of the 6.5kV IGBT Module
Luhong Xie, Hao Liu, Maoyang Pan, Yuxing Yan, Hongyu Sun, Yongzhang Huang (North China Electric Power University), Lixin Wu, Erping Deng (Hefei University of Technology), Weijie Wang (China Academy of Railway Sciences Co.,Ltd)

11:15 – 11:40        Investigation of the relationship between threshold voltage shift and power cycling lifetime of SiC MOSFETs
Carsten Kempiak and Andreas Lindemann (Otto-von-Guericke-University Magdeburg)

 11:40 – 12:05        Refreshment

 6th session Applications  Chairperson:

12:05 – 12:45        Compact Models as Key Enablers for Converter Simulation in Time Domain and System Level
Arnab Biswas (Infineon Technologies AG) Invited keynote paper

12:45 – 13:10        Low Inductive Module Integration of Flying Capacitor Topology
Michael Frisch (Vincotech D), Victor Antoni, (Vincotech HU) invited paper

 13:10 – 13:35        Potential High-Power Converters for Applications with 2000 Vdc using SiC MOSFETs in Two-Level and Si IGBTs in Three-Level Inverters
Martin Geske, Moritz Wegner, Piotr Szczupak, Christian Keller (GE Power Conversion Conversion GmbH)

13:35                    ISPS closing

Scheduled time:   Invited 40 min (35 min + 5 min for questions),

Oral 25 min (20 min + 5 min for questions)