doc. Mgr. Jakub Holovský, Ph.D.


Room: T2:B3-139, Technicka 2, 166 27 Praha 6
Phone-number: (+420) 2 2435 2167


  • 2006 – 2012 Charles University in Prague, Faculty of Mathematics and Physics – Quantum Optics and Optoelectronics doctoral thesis: “Silicon solar cells: methods for experimental study and evaluation of material parameters in advanced structures”
  • 2000 – 2006 Charles University in Prague, Faculty of Mathematics and Physics – Physics of Condensed and Macromolecular Matter, diploma thesis: “Photovoltaic silicon solar cells: study of materials and solar structures by Fourier photocurrent spectroscopy”

Work experience

  • 2018 – present Associate professor
  • 2014 – 2018 Assistant professor at Czech Technical University in Prague, Faculty of Electroengineering, teaching, supervising students, developing advanced characterization concepts for photovoltaic devices
  • 2012 – 2013 Post-doc fellowship at École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland, study of atomic structure of crystalline silicon surfaces by Attenuated Total Reflectance – FTIR spectroscopy
  • 2010 – 2011 PhD scholarship at École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland, developing a new method for I-V characterization of tandem devices
  • 2004 – present Researcher at Institute of Physics of the ASCR v.v.i. Prague, Department of Optical Materials – Fourier transform optoelectronical and optical (infrared) spectroscopy of novel materials (for photovoltaics), study of interfaces, electrical and optical characterization of finished devices, optical simulations, investigator of Czech and EU projects mainly in the field of thin film photovolaics

International projects

  • 2012 – 2015 6th EU Framework program project „Fast-track – Accelerated development and prototyping of nano-technology-based high-efficiency thin-film silicon solar modules ” (budget 390 kEUR)
  • 2012 – 2013 principal investigator Swiss Sciex-NMSch sprogram project: “HITS – Heterointerface tests of stability”, FTIR pectroscopic study of interfaces of crystalline silicon / amorphous silicon heterojunctions and their stability (budget 65 kEUR)
  • 2007 – 2009 6th EU Framework program project „SE Power-Foil – Roll-to-roll manufacturing for high efficient multi-junction thin film silicon flexible photovoltaic modules“, (budget 260 kEUR)
  • 2006 – 2009 6th EU Framework program project „ATHLET -Advanced Thin Film Technologies for Cost Effective Photovoltaics“, (budget 170 kEUR)

National projects

  • 2017 – 2022 MEYS-OPVVV project Centre for Advanced Photovoltacis, no CZ.02.1.01./0.0./0.0./15_003/0000464″, (budget 830 kEUR) The aim is to develop new technology of selective contacts to the silicon absorber based on silicon oxide passivation and metal oxides.
  • 2018 – 2020 Czech Science Foundation project PROXIMA – Manipulating properties of transition metal oxides interfaces (budget 140 kEUR) the aim is to develop a comprehensive model of oxygen vacancies and hydrogen passivation and their role at the interfaces and interfaces with other semiconductors.

Publication activity

  • more than 35 original peer reviewed international scientific papers, 1 book chapter, >20 conference proceedings, etc., 1 patent, active contribution (oral or poster presentations) on >10 international conferences. Citation index: >1200 citations, h-index: 12 (according to WoS, March 2019).

Selected related publications:

  • M. Ledinsky, T. Schönfeldová, J. Holovský, E. Aydin, Z. Hájková, L. Landová, N. Neyková, A. Fejfar, S. De Wolf. Temperature Dependence of the Urbach Energy of in Lead Iodide Perovskites J. Phys. Chem. Lett. (2019) accepted
  • J. Holovský, Z. Remeš, A. Poruba, D. Franta, B. Conrad, L. Abelová, D. Bušek Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence, Rev. Sci. Instrum. 86 (2018) 063114-1 – 063114-6. doi: 10.1063/1.5015988
  • F. Ventosinos, J. Klusáček, T. Finsterle, K. Künzel, F.-J. Haug, J. Holovský Shunt Quenching and Concept of Independent Global Shunt in Multijunction Solar Cells  IEEE J. Photovoltaics 8 (2018) 1005 – 1010 doi: 10.1109/JPHOTOV.2018.2828850
  • J. Holovský, et al. Photocurrent Spectroscopy of Perovskite Layers and Solar Cells: A Sensitive Probe of Material Degradation J. Phys. Chem. Lett. 8 (2017) 838-843. doi:10.1021/acs.jpclett.6b02854
  • S. Morawiec, J. Holovský, M. J. Mendes, M. Müller, et al., Experimental quantification of useful and parasitic absorption of light in plasmon-enhanced thin silicon films for solar cells application  Sci. Rep. 6 (2016) 22481(1) – 22481(10). doi:10.1038/srep22481
  • J. Holovský, et al., Effect of the thin-film limit on the measurable optical properties of graphene, Sci. Rep. 5 (2015) 15684 (1) – 15684 (6). doi: 10.1038/srep15684
  • J. Holovský, S. De Wolf, P. Jiříček, Ch. Ballif , Attenuated total reflectance Fourier-transform infrared spectroscopic investigation of silicon heterojunction solar cells, Rev. Sci. Instrum. 86 (2015) 073108-1 – 073108-6. doi: 10.1063/1.4926749
  • M. Ledinský, P. Löper, B. Niesen, J. Holovský, et al, Raman Spectroscopy of Organic – Inorganic Halide Perovskites, J. Phys. Chem. Lett. 6 (2015) 401-406. doi: 10.1021/jz5026323
  • S. De Wolf, J. Holovsky, S.-J. Moon, et al. Organometallic Halide Perovskites: Sharp Optical Absorption Edge and Its Relation to Photovoltaic Performance, J. Phys. Chem. Lett. 5 (2014) 1035 – 1039, doi: 10.1021/jz500279b
  • J. Holovský, C. Ballif, Thin-film limit formalism applied to surface defect absorption, Opt. Express 22 (2014) 31466 – 31472. doi: 10.1364/OE.22.031466
  • G. Bugnon, G. Parascandolo, T. Söderström, P. Cuony, M. Despeisse, S. Hänni, J. Holovský, F. Meillaud, C. Ballif A New View of Microcrystalline Silicon: The Role of Plasma Processing in Achieving a Dense and Stable Absorber Material for Photovoltaic Applications  Adv. Funct. Mater. 22 (2012) 3665 – 3671, doi: 10.1002/adfm.201200299
  • J. Holovský, M. Bonnet-Eymard, M. Boccard, M. Despeisse, C. Ballif, Variable light biasing method to measure component I-V characteristics of multi-junction solar cells, Sol. Energ. Mat. Sol. C. 103 (2012) 128 – 133, doi: 10.1016/j.solmat.2012.04.014
  • J. Holovský, M. Bonnet-Eymard, G. Bugnon, P. Cuony, M. Despeisse, C. Ballif, Measurement of the open circuit voltage of individual sub-cells in a dual-junction solar cell, IEEE J. Photovoltaics 2 (2012) 164 – 168, doi: 10.1109/JPHOTOV.2011.2178232
  • J. Holovský, et al., Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation, J. Non-Cryst. Solids 358 (2012) 2035 – 2038, doi: 10.1016/j.jnoncrysol.2011.12.031

Chapter in a book

  • Jakub Holovský, Fourier Transform Photocurrent Spectroscopy on Non-Crystalline Semiconductors, Fourier Transforms – New Analytical Approaches and FTIR Strategies, Goran Nikolic (Ed.), ISBN: 978-953-307-232-6, InTech, (2011)


  • Vaněček, A. Poruba, Z. Remeš, J. Holovský, A. Purkrt, O. Babchenko, K. Hruška, N. Neykova, U. Kroll, J. Meier. Photovoltaic cell and method for producing a photovoltaic cell , international patent PCT, publ. no. WO/2011/033464, publ. date 24.3.2011, applicants: Oerlikon Solar and FZÚ AV ČR

Conference talks

  • The 31st EU-PVSEC, Hamburg, Germany, September 14–18, 2015, Stability of Polycrystalline CH3NH3PbI3 Perovskites Probed by Optical Absorption and Conductivity
  • The 26th ICANS, Aachen, Germany, September 14–18, 2015, a-Si:H/c-Si Interfaces: Correlation between Infrared Spectroscopy and Electronic Passivation Properties
  • E-MRS, Lille, France, May 11-15, 2015, Charge transfer in polycrystalline CH3NH3PbI3 perovskites probed by optical absorption and conductivity
  • The 25th ICANS, Toronto, Canada, August 18–23, 2013, a-Si:H/c-Si Interfaces: Correlation between Infrared Spectroscopy and Electronic Passivation Properties
  • The 22nd EU-PVSEC Milan, Italy 3-7 September 2007, Separation of signals form a-Si:H and μc-Si:H part of a tandem thin film silicon solar cell in FTPS

Za informace zodpovídá/Responsible for the information: Jakub Holovský