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Surge current test of SiC MOSFET with planar Assembling and Joining Technology
Authors & Affiliations
Yijun Ye1, Alexander Hensler1, Thomas Basler2, Josef Lutz2
1) Digital Industries
Motion Control
Innovation Center for applied Power Electronics
Siemens AG
Erlangen
Germany
2) Chemnitz University of Technology
Chair of Power Electronics
Chemnitz
Germany
DOI
https://doi.org/10.14311/ISPS.2023.020
Abstract
This paper introduces a novel packaging with planar Assembling and Joining Technology (AJT). The 1200V SiC MOSFET body diode with the new AJT has been investigated under surge current conditions. The test result of the planar AJT is compared with a standard TO-247-4 discrete component. Additionally, thermal impedance of both packages is measured and compared.
Keywords:
surge current test, novel packaging, SiC MOSFET
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