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 SiC Power Device Processing with Special Regard to Ion Implantation

Authors & Affiliations

Werner Schustereder
Infineon Technologies Austria AG
Siemensstr. 2, A-9500 Villach
AUSTRIA

DOI

https://doi.org/10.14311/ISPS.2023.003

Abstract

 For power device fabrication distinct challenges have to be addressed. In many fields they are identical to the needs in the CMOS world. However, some features of power device technologies require customized processes. Power devices in general are facing the main demand to lower dissipation losses caused by increasing current densities at decreasing structure sizes and optimized performance of device switching behavior at the same time. Hence, advanced manufacturing processes of wafer frontside and backside as well as for engineering of bulk properties are necessary.

Whereas MOSFETs used in CMOS IC switches typically operate at a parameter range of some µA at voltages of <5V, power devices utilize up to kA currents at voltages of up to kV range. Therefore chip areas are much larger to cope with these requirements. Also, 3D device structuring is required in order to enable current flow from the chip frontside to the backside.

In general technology requirements in combination with given raw material properties drive manufacturing challenges. That in turn puts pressure on advancing both single unit process steps as well as novel integration concepts, also incorporating feed forward run to run systems and new computational capabilities towards AI. The overall equipment effectiveness in terms of availability, performance and quality is key for an economic production environment. Machine learning based concepts are developed both for the prediction of individual equipment behavior as well as to manage complexity in the overall manufacturing process line. Furthermore ML-assisted root cause analysis is developed to identify important “hidden” parameters in production equipment as well as to help revealing and understanding complex correlations.

Keywords:

 SiC, Ion Implantation

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