Back to Content

---

 On the design of measuring circuit for OCVD method

Authors & Affiliations

Jiri Hajek and Vaclav Papez
Department of Electrotechnology
Faculty of Electrical Engineering
CTU in Prague
166 27 Prague 6
Czech Republic

DOI

https://doi.org/10.14311/ISPS.2023.018

Abstract

The article deals with the matter that is often omitted by authors – design of measuring circuit. The most of publications describe theoretical background of the OCVD method or they interpret results obtained on modern SiC or 4H-SiC structures. But correct and relevant results are conditioned by corresponding measuring circuit. Even if the OCVD method is based “just” on recording of voltage response, measuring circuit must fulfill a lot of requirements from high-frequency techniques. Following article tries to explain these techniques.

Keywords:

OCVD, lifetime, transient effects, damping, inductance-less sensing.

Download full text in pdf