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 Annealing behavior of Pt and PtH defects in fully process 1.2kV Si diodes covering the whole substrate thickness

Authors & Affiliations

Lena Bergmann1,4, Bianca Kurz2, Gregor Pobegen3, Daniel Schlögl1, Holger Schulze1, Heiko B. Weber4 and Michael Krieger4
1) Infineon Technologies AG, Siemensstr. 2, 9500 Villach, Austria,

2) Institut für Angewandte Physik
Technische Universität Wien
Wiedner Hauptstr. 8-10/134
1040 Wien

3) KAI Kompetenzzentrum Automobil- und Industrieelektronik GmbH
Europastr. 8
9524 Villach

4) Lehrstuhl für Angewandte Physik
Department Physik
Friedrich-Alexander University Erlangen-Nürnberg (FAU)
Staudtstr. 7
91058 Erlangen



We present an annealing study of the platinum-hydrogen (PtH) defect complex on fast recovery silicon (Si) high voltage diodes. These specially processed test diodes were annealed in nitrogen ambient at three different annealing temperatures for 30 min, respectively. Before and after this annealing step the substitutional platinum (Pt) and platinum-hydrogen concentration within the entire space charge region (SCR) were characterized using high-voltage current deep level transient spectroscopy. The annealing impacts the investigated trap levels as previously found in bulk Si samples. For annealing temperatures above 250°C the PtH starts to dissociate partly and at 330°C almost no PtH can be found anywhere inside the entire SCR. For the annealing at 300°C additionally an increase of the PtH concentration in the proximity of the pn-junction is observed which is most likely due to the presence of a hydrogen source located at the front side of the diodes. Furthermore, a clear correlation between the leakage currents and the PtH depth profiles suggests strongly that the PtH is the major carrier generation center in the investigated samples.


Silicon, diode, Platinum, Platinum-Hydrogen, lifetime control, high voltage, DLTS

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