The influence of electrical stress on the distribution of electrically active defects in IGBT
Authors & Affiliations
J. Drobný1, J. Marek1, A. Chvála1, J. Faraga1, M. Jagelka1,2, and L. Stuchlíková1
1 Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Bratislava, Slovakia
2 POWERTEC, s.r.o, Bratislava, Slovakia
This paper highlights electrically active defects investigation of the sixth generation 1200 V trench stop
silicon-based Insulated Gate Bipolar Transistors by Deep Level Transient Fourier Spectroscopy. The
focus is on the impact of electrical stress on defects distribution in the studied structures. Five electronlike deep energy levels ET1 (0.126 eV), ET2 (0.188 eV), ET3 (0.322 eV), ET4 (0.405 eV), and ET5
(0.514 eV), and nine hole-like deep energy levels HT1 (0.187 eV), HT2 (0.231 eV), HT3 (0.246 eV),
HT4 (0.301 eV), HT5 (0.319 eV), HT6 (0.327 eV), HT7 (0.529 eV), HT8 (0.534 eV), and HT9 (0.750 eV)
were identified. The presence of unintentional impurities like zinc, platinum, gold, etc. and emissions
from structural imperfections was confirmed. A significant increase of the defect concentration after
electrical stress in the temperature range of 120 to 225 K has been detected. Electrical stress did not
affect the defect concentration above temperature 300 K.
IGBT, deep energy levels, electrically active defects, the impact of electrical stress, Deep Level Transient Fourier Spectroscopy.