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 DEGRADATION OF POWER SIC MOSFET Under REPETITIVE UIS and SHORT CIRCUIT STRESS

Authors & Affiliations

J. Marek1*, J. Kozárik1,2, A. Chvála1, M. Minárik1 and Ľ. Stuchlíková1
1 Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovičova 3, 812 19 Bratislava, Slovakia
2NanoDesign, s.r.o, Drotárska 19a, 811 04 Bratislava, Slovakia
*e-mail: juraj.marek@stuba.sk

DOI

10.14311/ISPS.2021.010

Abstract

 This paper investigates the reliability of commercial planar and trench 1.2-kV 4H-SiC MOFSETs under repetitive unclamped inductive switching (UIS) and short circuit (SC) stresses. The degradation of device characteristics, including the transfer characteristics, drain leakage current Idss, and output characteristics, is observed. Repetitive SC stress was performed for 400 and 600 V bus voltages. Increased buss voltages during stress have higher impact on electrical performance of tested devices. The hot carriers injection and trapping into the gate oxide in the channel region may occur during the aging experiments and are believed to be responsible for the variation of electrical parameters.

Keywords:

Reliability, degradation, SiC MOSFET, TrenchMOSFET, repetitive UIS, repetitive short circuit

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