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New method for Si-wafer resistivity determination
Authors & Affiliations
J. Hájek, V. Papež, M. Horák,
Department of Electrotechnology
Faculty of Electrical Engineering, CTU in Prague
166 27 Prague 6, Czech Republic
DOI
https://doi.org/10.14311/ISPS.2021.021
Abstract
Wafer resistivity is one of the most important parameters in production of Power Semiconductor Devices (PSD). This parameter is mainly responsible for achieving required breakdown voltage and other electric parameters. Proposal article describes principles and details of newly designed resonant method and new equipment according patent [1] and compares it with commonly known 4point method. This new method is based on resonant measurement of capacity and following calculation. New method exhibits comparable accuracy with 4point method and brings additional advantages.
Keywords:
resistivity, pn junction, C–V curve, capacity, resonance.